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参数资料
| 型号： | IRF7404 |
| 厂商： | Analog Devices, Inc. |
| 英文描述： | Thermoelectric Cooler Controller |
| 中文描述： | 热电冷却器控制器 |
| 文件页数： | 17/24页 |
| 文件大小： | 416K |
| 代理商： | IRF7404 |
REV. C
ADN8830
–17–
Although the FETs that drive OUT A alternate between Q1 and
Q2 being on, they have an equivalent series resistance that is
equal to a weighted average of their r
DS, ON
values.
+
(
–
1
The resistive power loss from the PWM transistors is then
R
D
r
D
r
EQIV
DS P
DS N
=
×
)
×
,
,
1
1
(35)
P
R
I
FET PWM
,
EQIV
TEC
=
×
2
(36)
There is also a power loss from the continuing charging and
discharging of the gate capacitances on Q1 and Q2. The power
dissipated due to gate charge loss (
P
GCL
) is
P
C
V
f
GCL
ISS
DD
CLK
=
1
2
2
(37)
using the appropriate input capacitance (
C
ISS
) for the NMOS
and PMOS. Both transistors are switching, so
P
GCL
should be
calculated for each one and will be added to find the total power
dissipated from the circuit.
The series resistance of the inductor,
R
2 from Figure 14, will
also exhibit a power dissipation equal to
P
R
I
R
TEC
2
2
2
=
×
(38)
Core loss from the inductor arises as a result of nonidealities of
the inductor. Although this is difficult to calculate explicitly, it
can be estimated as 80% of
P
RLS
at 1 MHz switching frequen-
cies and 50% of
P
RL
at 100 kHz. Judging conservatively
P
LOSS
RL
=
×
0 8
Finally, the power dissipated by the ADN8830 is equal to the
current used by the device multiplied by the supply voltage.
Again, this exact equation is difficult to determine as we have
already taken into account some of the current while finding the
gate charge loss. A reasonable estimate is to use 40 mA as the
P
(39)
total current used by the ADN8830. The power dissipated from
the device itself is
=
×
P
V
mA
ADN
DD
8830
10
(40)
There are certainly other minor mechanisms for power dissipa-
tion in the circuit. However, a rough estimate of the total power
dissipated can be found by summing the preceding power dissi-
pation equations.
Efficiency
is then found by comparing the
power dissipated with the required output power to the load.
Efficiency
P
+
P
P
LOAD
LOAD
DISS TOT
,
=
(41)
where
P
I
V
LOAD
LOAD
LOAD
=
×
The measured efficiency of the system will likely be less than the
calculated efficiency. Measuring the efficiency of the application
circuit is fairly simple but must be done in an exact manner to
ensure the correct numbers are being measured. Using two high
current, low impedance ammeters and two voltmeters, the cir-
cuit should be set up as shown in Figure 15.
A
V
DD
POWER SUPPLY
GND
ADN8830
V
V
A
TEC
LOAD
Figure 15. Measuring Efficiency of the ADN8830 Circuit
Table V. Recommended FETs for Linear Output Amplifier
Part Number
Type
C
GD
(nF)
0.17
0.15
0.5
2.2
0.23
0.6
Ext. C
GD
(nF)
C
SNUB
(nF)
r
DS, ON
(m )
18
35
22
20
9.5
12
I
MAX
(A)
6.0
4.5
8.7
9.5
11.5
10
Manufacturer
FDW2520C
*
NMOS
PMOS
NMOS
PMOS
NMOS
PMOS
Fairchild
Fairchild
International Rectifier
International Rectifier
Fairchild
Fairchild
2.2
3.3
IRF7401
IRF7233
FDR6674A
FDR840P
1.0
3.3
1.0
3.3
*
Recommend transistors in typical application circuit Figure 1.
Table VI. Recommended FETs for PWM Output Amplifier
Part Number
Type
C
ISS
(nF)
1.33
1.33
1.0
3.5
1.6
1.5
r
DS,ON
(m )
18
35
30
17
22
40
Continuous I
MAX
(A)
6.0
4.5
5.3
7.3
8.7
6.7
Manufacturer
FDW2520C
*
NMOS
PMOS
NMOS
PMOS
NMOS
PMOS
Fairchild
Fairchild
Vishay Siliconix
Vishay Siliconix
International Rectifier
International Rectifier
Si7904DN
Si7401DN
IRF7401
IRF7404
*
Recommend transistors in typical application circuit Figure 1.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7404HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 6.7A 8SOIC - Rail/Tube |
| IRF7404PBF | 功能描述:MOSFET 20V DUAL N-CH HEXFET 40mOhms 33.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7404QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7404QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7404TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 6.7A 8SOIC - Tape and Reel |
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