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参数资料
| 型号： | IRFD120 |
| 厂商： | Harris Corporation |
| 英文描述： | 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 1.3a规范，以及1.1A的，80V和100V，0.30和0.40 Ohm的N通道功率MOSFET |
| 文件页数： | 4/7页 |
| 文件大小： | 91K |
| 代理商： | IRFD120 |
2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
NOTE:
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
2
4
6
8
10
5
0
V
GS
= 9V
V
GS
= 4V
V
GS
= 5V
V
GS
= 6V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
20
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
16
12
8
0
8
6
4
2
0
10
4
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
> I
D(ON)
x r
DS(ON)MAX
0
0.4
0.8
10
20
30
r
D
,
I
D
, DRAIN CURRENT (A)
40
0
0.2
0.6
V
GS
= 10V
V
GS
= 20V
O
)
2
μ
s PULSE TEST
N
2.2
1.4
1.0
0.6
0.2
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
1.8
80
0
-40
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 0.6A
1.25
0.95
0.85
0.75
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
160
1.05
1.15
0
40
80
120
I
DS
= 250
μ
A
1000
200
00
20
50
C
600
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
800
400
10
30
C
ISS
C
OSS
C
RSS
40
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
IRFD120
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFD120PBF | 功能描述:MOSFET 100V Single N-Channel HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFD120R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1.3A I(D) | TO-250VAR |
| IRFD120S2497 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD121 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD121R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 1.3A I(D) | TO-250VAR |
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