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参数资料
| 型号： | IRF720A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为1.8Ω，漏电流为3.3A）) |
| 中文描述： | 3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 224K |
| 代理商： | IRF720A |
IRF720A
400
--
2.0
--
--
--
--
--
0.54
--
--
--
--
--
60
27
12
17
51
18
19
2.7
11.1
--
--
4.0
100
-100
10
100
1.8
--
500
70
33
35
45
110
45
26
--
--
2.25
385
--
--
--
230
1.16
3.3
13
1.5
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=40mH, I
AS
=3.3A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
(3) I
≤
3.3A, di/dt
≤
110A/
μ
s, V
DD
≤
BV
, Starting T
J
=25
°
C
(4) Pulse Test: Pulse Width = 250
μ
s, Duty Cycle
≤
2%
(5) Essentially Independent of Operating Temperature
1&+$11(/
32:(5 026)(7
Electrical Characteristics
(T
C
=25
°
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
°
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=400V
V
DS
=320V,T
C
=125
°
C
V
GS
=10V,I
D
=1.65A
(4)
V
DS
=50V,I
D
=1.65A
(4)
V
DD
=200V,I
D
=3.3A,
R
G
=18
See Fig 13
(4) (5)
V
DS
=320V,V
GS
=10V,
I
D
=3.3A
See Fig 6 & Fig 12
(4) (5)
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
°
C,I
S
=3.3A,V
GS
=0V
T
J
=25
°
C,I
F
=3.3A
di
F
/dt=100A/
μ
s
(4)
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