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参数资料
| 型号： | IRFD120 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET |
| 中文描述： | 1300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HEXDIP-4 |
| 文件页数： | 3/7页 |
| 文件大小： | 91K |
| 代理商： | IRFD120 |
2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
1.3
A
Pulse Source to Drain Current
I
SDM
-
-
5.2
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
o
C, I
o
C, I
SD
= 1.3A, V
GS
= 0V (Figure 12)
-
-
2.5
V
Reverse Recovery Time
T
J
= 150
SD
= 1.3A, dI
SD
/dt = 100A/
μ
μ
s
-
280
-
ns
Reverse Recovery Charge
T
J
= 150
SD
= 1.3A, dI
SD
/dt = 100A/
s
-
1.6
-
μ
C
NOTES:
2. Pulse test: pulse width
3. V
DD
= 25V, starting T
≤
= 25
300
μ
C, L = 32mH, R
s, duty cycle
≤
2%.
= 25
J
o
G
,
peak I
AS
= 1.3A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
G
D
S
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
A
, AMBIENT TEMPERATURE (
o
C)
50
75
100
25
150
1.5
1.2
0.9
0
0.6
I
D
D
0.3
125
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
I
D
,
100
0.1
10
0.1
0.01
10
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
1ms
10ms
100ms
100
μ
s
DC
1
I
D
,
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
4
8
12
16
20
50
0
V
GS
= 4V
V
GS
= 5V
V
GS
= 7V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
V
GS
= 9V
IRFD120
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相关代理商/技术参数 |
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|---|---|
| IRFD120PBF | 功能描述:MOSFET 100V Single N-Channel HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFD120R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1.3A I(D) | TO-250VAR |
| IRFD120S2497 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD121 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD121R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 1.3A I(D) | TO-250VAR |
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