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参数资料
| 型号： | IRFD9110 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET |
| 中文描述： | 700 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HEXDIP-4 |
| 文件页数： | 1/7页 |
| 文件大小： | 93K |
| 代理商： | IRFD9110 |
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
IRFD9110
0.7A, 100V, 1.200 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Features
0.7A, 100V
r
DS(ON)
= 1.2
00
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD9110
HEXDIP
IRFD9110
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
Data Sheet
January 2002
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| IRFI540A | Advanced Power MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFD9110PBF | 功能描述:MOSFET P-Chan 100V 0.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFD9112 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 600MA I(D) | TO-250VAR |
| IRFD9113 | 功能描述:MOSFET P-Chan 100V 0.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFD9120 | 功能描述:MOSFET P-Chan 100V 1.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFD9120PBF | 功能描述:MOSFET P-Chan 100V 1.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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