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参数资料
| 型号： | IRFD9110 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET |
| 中文描述： | 700 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HEXDIP-4 |
| 文件页数： | 3/7页 |
| 文件大小： | 93K |
| 代理商： | IRFD9110 |
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
-0.7
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-3.0
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -0.7A, V
GS
= 0V, (Figure 12)
-
-
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= -0.7A, dI
SD
/dt = 100A/
μ
s
-
120
-
ns
Reverse Recovery Charge6466
Q
RR
T
J
= 150
o
C, I
SD
= -0.7A, dI
SD
/dt = 100A/
μ
s
-
6.0
-
μ
C
NOTES:
2. Pulse test: pulse width
3. V
DD
= 25V, starting T
≤
= 25
300
μ
C, L = 582mH, R
s, duty cycle
≤
2%.
J
o
G
= 25
,
peak I
AS
= 0.7A. See Figures 14, 15.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
G
D
S
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
A
, AMBIENT TEMPERATURE (
o
C)
50
75
100
25
150
-1.0
-0.8
-0.6
0
-0.4
I
D
D
-0.2
125
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
I
D
,
100
0.1
10
1
0.01
10
μ
s
DC
1ms
10ms
100ms
LIMITED BY r
DS(ON)
T
C
= 25
o
C
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
100
μ
s
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-1
-2
-3
-4
-5
-50
0
V
GS
= -5V
V
GS
= -7V
V
GS
= -8V
V
GS
= -10V
V
GS
= -9V
V
GS
= -6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
IRFD9110
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