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参数资料
| 型号： | IRFI540A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 28 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | I2PAK-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 232K |
| 代理商： | IRFI540A |
IRFW/I540A
BV
DSS
= 100 V
R
DS(on)
= 0.052
Ω
I
D
= 28 A
100
28
19.8
110
±
20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
300
1.4
40
62.5
--
--
--
1
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
175
℃
Operating Temperature
n
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= 100V
n
Lower R
DS(ON)
: 0.041
Ω
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
℃
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
℃
)
Continuous Drain Current (T
C
=100
℃
)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
℃
)
Total Power Dissipation (T
C
=25
℃
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
③
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
℃
A
℃
*
2001 Fairchild Semiconductor Corporation
Rev. B1
相关PDF资料 |
PDF描述 |
|---|---|
| IRFW540A | Advanced Power MOSFET |
| IRFW540 | Advanced Power MOSFET |
| IRFWI540A | Advanced Power MOSFET |
| IRFI624B | 250V N-Channel MOSFET |
| IRFW624B | 250V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFI540ATU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFI540G | 功能描述:MOSFET N-Chan 100V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFI540GPBF | 功能描述:MOSFET N-Chan 100V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFI540N | 制造商:INTRSL 功能描述: 制造商:International Rectifier 功能描述:MOSFET N FULLPAK |
| IRFI540NPBF | 功能描述:MOSFET MOSFT 100V 18A 52mOhm 62.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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