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参数资料
型号： IRFD9110
厂商： INTERSIL CORP
元件分类： 功率晶体管
英文描述： 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
中文描述： 700 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装： HEXDIP-4
文件页数： 2/7页
文件大小： 93K
代理商： IRFD9110
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFD9110
-100
-100
-0.7
-3.0
±
20
1.0
0.008
190
-55 to 150
UNITS
V
V
A
A
V
W
W/
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Dissipation Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DS
DGR
D
DM
GS
D
o
C
AS
J,
T
STG
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
V
= -250
μ
A, V
GS
= -250
= 0V, (Figure 9)
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
I
DSS
GS
= V
DS
, I
D
μ
A
-2
-
-4
V
Zero Gate Voltage Drain Current
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
-25
μ
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
V
= 0V, T
C
= 125
o
C
-
-
-250
A
On-State Drain Current (Note 2)
I
D(ON)
V
(Figure 6)
DS
> I
D(ON)
x r
DS(ON)MAX,
GS
= -10V,
-0.7
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
= -0.3A, V
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
I
D
V
GS
= -0.6A, (Figure 11)
= -10V, (Figures 8)
-
1.000
1.200
Forward Transconductance (Note 2)
DS
≤
50V, I
D
0.59
0.88
-
S
Turn-On Delay Time
V
V
R
R
MOSFET Switching Times are Essentially
Independent of Operating Temperature
DD
GS
L
L
= 56
= 0.5 x Rated BV
=-10V, (Figures 16, 17),
= 70
for V
DSS
for V
DSS
DSS,
I
D
= -0.7A, R
G
= 9.1
,
= 50V
= 40V
-
15
30
ns
Rise Time
-
30
60
ns
Turn-Off Delay Time
-
20
40
ns
Fall Time
-
20
40
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
(Figures 13, 18, 19) Gate Charge is
Essentially Independent of Operating
Temperature
GS
= -10V, I
D
= -0.7A, V
DS
= 0.8V x Rated BV
DSS,
-
11
15
nC
Gate to Source Charge
Q
gs
-
5.7
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
5.3
-
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 10)
-
180
-
pF
Output Capacitance
C
OSS
C
RSS
L
D
-
85
-
pF
Reverse Transfer Capacitance
-
30
-
pF
Internal Drain Inductance
Measured From the Drain
Lead, 2mm (0.08in) From
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.0
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 2mm
(0.08in) From Header to
Source Bonding Pad
-
6.0
-
nH
Thermal Resistance Junction to Ambient
R
θ
JA
Typical Socket Mount
-
-
120
o
C/W
L
S
L
D
G
D
S
IRFD9110
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