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参数资料
| 型号： | IRFD120 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET |
| 中文描述： | 1300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HEXDIP-4 |
| 文件页数： | 5/7页 |
| 文件大小： | 91K |
| 代理商： | IRFD120 |
2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
, DRAIN CURRENT (A)
g
f
,
0
4
8
12
16
1
2
3
4
5
20
0
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
3
0.1
10
2
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
1
5
5
2
4
T
J
= 25
o
C
T
J
= 150
o
C
2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
G
, GATE CHARGE (nC)
V
G
,
0
4
6
10
5
15
20
I
D
= 5.2A
10
0
2
8
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
IRFD120
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFD120PBF | 功能描述:MOSFET 100V Single N-Channel HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFD120R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1.3A I(D) | TO-250VAR |
| IRFD120S2497 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD121 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD121R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 1.3A I(D) | TO-250VAR |
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