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参数资料
| 型号： | IRF640A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | L E D,YELLOW,50 DEG VIEW ANGLE |
| 中文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 260K |
| 代理商： | IRF640A |
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/ T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V
nA
A
μ
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A
See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=30V
V
GS
=-30V
V
DS
=200V
V
DS
=160V,T
C
=125
V
GS
=10V,I
D
=9A
V
DS
=40V,I
D
=9A
V
DD
=100V,I
D
=18A,
R
G
=9.1
See Fig 13
V
DS
=160V,V
GS
=10V,
I
D
=18A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
μ
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,I
S
=18A,V
GS
=0V
T
J
=25 ,I
F
=18A
di
F
/dt=100A/ s
IRF640A
200
--
2.0
--
--
--
--
--
0.26
--
--
--
--
--
210
94
17
16
48
24
44
10.4
27.1
--
--
4.0
100
-100
10
100
0.18
--
1500
250
110
40
40
110
60
58
--
--
9.61
1160
--
--
--
195
1.35
18
72
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=1mH, I
AS
=18A, V
DD
=50V, R
G
=27 , Starting T
J
=25
I
SD
18A, di/dt 260A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
O
1
O
O
3
O
2
4
o
C
o
C
C
V/
o
C
O
1
O
4
O
4
C
C
O
4
O
4
O
5
O
4
O
4
O
5
o
C
相关PDF资料 |
PDF描述 |
|---|---|
| IRF644 | 250V N-Channel MOSFET |
| IRF644 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
| IRF644N | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| IRF644NL | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| IRF644NS | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF640ACP001 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF640B | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRF640B_FP001 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF640B_FP001_Q | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF640B_FP01F080 | 制造商:Fairchild Semiconductor Corporation 功能描述:N-CH/200V/18A/0.18OHM/SUBSTITU |
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