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参数资料
| 型号： | IRF640A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | L E D,YELLOW,50 DEG VIEW ANGLE |
| 中文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 260K |
| 代理商： | IRF640A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
DS
= 200V
Lower R
DS(ON)
: 0.144 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
JC
R
CS
R
JA
θ
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
)
)
)
Characteristic
Value
200
18
11.4
72
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
TO-220
1.Gate 2. Drain 3. Source
3
2
1
IRF640A
BV
DSS
= 200 V
R
DS(on)
= 0.18
I
D
= 18 A
216
18
13.9
5.0
139
1.11
- 55 to +150
300
0.9
--
62.5
--
0.5
--
30
O
1
O
O
1
O
1
2
O
3
o
C
o
C
o
C
o
C
θ
θ
o
C/W
1999 Fairchild Semiconductor Corporation
Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| IRF644 | 250V N-Channel MOSFET |
| IRF644 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
| IRF644N | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| IRF644NL | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| IRF644NS | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF640ACP001 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF640B | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRF640B_FP001 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF640B_FP001_Q | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF640B_FP01F080 | 制造商:Fairchild Semiconductor Corporation 功能描述:N-CH/200V/18A/0.18OHM/SUBSTITU |
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