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参数资料
| 型号： | IRFD9014PBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | MOSFETs |
| 英文描述： | MOSFET P-CH 60V 1.1A 4-DIP |
| 中文描述： | MOSFET Small Signal P-Chan 60V 1.1 Amp |
| 文件页数： | 2/9页 |
| 文件大小： | 1750K |
| 代理商： | IRFD9014PBF |
www.vishay.com
2
Document Number: 91136
S10-2463-Rev. C, 08-Nov-10
IRFD9014, SiHFD9014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
-
120
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 μA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= ± 20 V
V
DS
= - 60 V, V
GS
= 0 V
V
DS
= - 48 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= - 10 V
V
DS
= - 25 V, I
D
= - 0.66 A
b
- 60
-
-
V
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
V
DS
/T
J
V
GS(th)
I
GSS
-
- 0.060
-
V/°C
- 2.0
-
- 4.0
V
Gate-Source Leakage
-
-
± 100
nA
Zero Gate Voltage Drain Current
I
DSS
-
-
-100
μA
-
-
- 500
Drain-Source On-State Resistance
R
DS(on)
g
fs
I
D
= - 0.66 A
b
-
-
0.50
Forward Transconductance
0.70
-
-
S
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V,
V
= - 25 V,
f = 1.0 MHz, see fig. 5
-
270
-
pF
Output Capacitance
-
170
-
Reverse Transfer Capacitance
-
31
-
Total Gate Charge
V
GS
= - 10 V
I
D
= - 6.7 A, V
DS
= - 48 V,
see fig. 6 and 13
b
-
-
12
nC
Gate-Source Charge
-
-
3.8
Gate-Drain Charge
-
-
5.1
Turn-On Delay Time
V
DD
= - 30 V, I
D
= - 6.7 A,
R
g
= 24
, R
D
= 4.0
, see fig. 10
b
-
11
-
ns
Rise Time
-
63
-
Turn-Off Delay Time
-
10
-
Fall Time
-
31
-
Internal Drain Inductance
L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-
4.0
-
nH
Internal Source Inductance
L
S
-
6.0
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
-
-
- 1.1
A
Pulsed Diode Forward Current
a
I
SM
-
-
- 8.8
Body Diode Voltage
V
SD
t
rr
Q
rr
t
on
T
J
= 25 °C, I
S
= - 1.1 A, V
GS
= 0 V
b
-
-
- 5.5
V
Body Diode Reverse Recovery Time
T
J
= 25 °C, I
F
= - 6.7 A, dI/dt = 100 A/μs
b
-
80
160
ns
Body Diode Reverse Recovery Charge
-
0.096
0.19
μC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
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