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参数资料
| 型号： | IRF520A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为100V，导通电阻为0.2Ω，漏电流为9.2A）) |
| 中文描述： | 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 243K |
| 代理商： | IRF520A |
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
J
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
I
D
=250
V
DS
=5V,I
D
=250
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=150
A
A
See Fig 7
μ
A
V
GS
=10V,I
D
=4.6A
V
DS
=40V,I
D
=4.6A
V
DD
=50V,I
D
=9.2A,
R
G
=18
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=9.2A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
,I
S
=9.2A,V
GS
=0V
T
J
=25
,I
F
=9.2A
di
F
/dt=100A/
μ
s
Ο
C
μ
O
4
O
5
Ο
C
μ
Ο
C
O
4
O
4
O
4
O
4
O
1
Ο
C
Ο
C
μ
O
5
O
4
IRF520A
100
--
2.0
--
--
--
--
--
0.12
--
--
--
--
--
95
38
14
14
36
28
16
2.7
7.8
--
--
4.0
100
-100
10
100
0.2
--
480
110
45
40
40
90
70
22
--
--
6.35
370
--
--
--
98
0.34
9.2
37
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=
2
mH, I
AS
=9.2A, V
DD
=25V, R
G
=27
I
SD
9.2A, di/dt
3
00A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
, Starting T
J
=25
<
O
1
O
O
3
O
2
4
o
C
o
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF520CHIP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP |
| IRF520FI | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| IRF520L | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) |
| IRF520N | 功能描述:MOSFET N-CH 100V 9.7A TO-220AB RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF520NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB |
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