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参数资料
| 型号： | IRFD120 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET |
| 中文描述： | 1300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HEXDIP-4 |
| 文件页数： | 2/7页 |
| 文件大小： | 91K |
| 代理商： | IRFD120 |
2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFD120
100
100
1.3
5.2
±
20
1.0
0.008
36
-55 to 150
UNITS
V
V
A
A
V
W
W/
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DS
DGR
D
DM
GS
D
o
C
AS
J
, T
STG
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
V
= 250
μ
A, V
GS
= 250
= 0V (Figure 9)
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
I
DSS
GS
= V
DS
, I
D
μ
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
V
DS
> I
D(ON)
±
20V
x r
DS(ON)
Max, V
GS
= 10V
1.3
-
-
A
Gate Source Leakage
V
GS
= 0.6A, V
=
-
-
±
500
nA
Drain Source On Resistance (Note 2)
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
I
D
V
GS
x r
= 10V (Figures 7, 8)
-
0.25
0.30
Forward Transconductance (Note 2)
DS
> I
D(ON)
DS(ON)MAX
, I
D
≈
= 0.6A (Figure 11)
0.9
1.0
-
S
Turn-On Delay Time
V
V
R
MOSFET Switching Times are Essentially
Independent of Operating Temperature
DD
GS
L
= 38.5
= 0.5 x Rated BV
= 10V, R
for V
DSS
= 50V
, I
D
1.3A,
G
= 9.1
DD
-
20
40
ns
Rise Time
-
35
70
ns
Turn-Off Delay Time
-
50
100
ns
Fall Time
-
35
70
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
I
g(REF)
Gate Charge is Essentially Independent of Operating
Temperature
GS
= 10V, I
= 1.5mA (Figure 13)
D
= 1.3A, V
DS
= 0.8 x Rated BV
DSS
,
-
11
15
nC
Gate to Source Charge
Q
gs
-
6.0
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
5.0
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1MHz (Figure 10)
-
450
-
pF
Output Capacitance
C
OSS
C
RSS
L
D
-
200
-
pF
Reverse Transfer Capacitance
-
50
-
pF
Internal Drain Inductance
Measured From the Drain
Lead, 2mm (0.08in) from
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device’s
Inductances
-
4.0
-
nH
Internal Source Inductance
L
S
Measured From the Source
Lead, 2mm (0.08in) from
Header to Source Bonding
Pad
-
6.0
-
nH
Thermal Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
120
o
C/W
L
S
L
D
G
D
S
IRFD120
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| IRFD120PBF | 功能描述:MOSFET 100V Single N-Channel HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IRFD120S2497 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD121 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD121R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 1.3A I(D) | TO-250VAR |
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