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参数资料
| 型号： | IRF750 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为0.3Ω，漏电流为15A）) |
| 中文描述： | 15 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 7/7页 |
| 文件大小： | 243K |
| 代理商： | IRF750 |
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As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
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PowerTrench
QS
Quiet Series
SuperSOT-3
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2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
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any manner without notice.
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supplementary data will be published at a later date.
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相关PDF资料 |
PDF描述 |
|---|---|
| IRF820A | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为3.0Ω，漏电流为2.5A）) |
| IRF820S | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为3.0Ω，漏电流为2.5A）) |
| IRF840S | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为0.85Ω，漏电流为8A）) |
| IRF9521 | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| IRF9522 | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7501 | 制造商:International Rectifier 功能描述:MOSFET DUAL NN MICRO-8 |
| IRF7501HR | 制造商:International Rectifier 功能描述:20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A MICRO 8 PACKAGE - Rail/Tube |
| IRF7501PBF | 制造商:International Rectifier 功能描述:MOSFET DUAL NN MICRO-8 制造商:International Rectifier 功能描述:MOSFET, DUAL, NN, MICRO-8 |
| IRF7501TR | 功能描述:MOSFET DUAL N-CH 20V 2.4A MICRO8 RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:HEXFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| IRF7501TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 2.4A 8-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 2.4A 8PIN MICRO8 - Tape and Reel |
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