| 型号 | 厂商 | 描述 |
| irfi630b 2 3 4 5 6 7 8 9 |
FAIRCHILD SEMICONDUCTOR CORP | 200V N-Channel MOSFET |
| irfw634b 2 3 4 5 6 7 8 9 |
FAIRCHILD SEMICONDUCTOR CORP | 250V N-Channel MOSFET |
| irfi634 2 3 4 5 6 7 8 9 |
Fairchild Semiconductor Corporation | 250V N-Channel MOSFET |
| irfi634b 2 3 4 5 6 7 8 9 |
FAIRCHILD SEMICONDUCTOR CORP | 250V N-Channel MOSFET |
| irfw720s 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET（400V，1.8Ω，3.3A）(N沟道功率MOS场效应管（漏源电压400V，导通电阻1.8Ω，漏电流3.3A）) |
| irfw740s 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 400V N-Channel Power MOSFET(漏源电压为400V的N沟道增强型功率MOS场效应管) |
| irfwi530a 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | Advanced Power MOSFET |
| irfwz14 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfwz24 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfwz34 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfwz44 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfy330 |
SEMELAB LTD | N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package |
| irfy9120 |
SEMELAB LTD | P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package |
| irfz14a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfz14 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfz24 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfz34a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfz34 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfz44a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irfz44 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| irl510a 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | Advanced Power MOSFET |
| irl510 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 100V N-Channel Power MOSFET(漏源电压为100V的N沟道增强型功率MOS场效应管) |
| irl520a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | Advenced Power MOSFET |
| irl520s 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 100V N-Channel Power MOSFET(漏源电压为100V的N沟道增强型功率MOS场效应管) |
| irl530 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | RES 0R .1W 1% MF 805 CHP |
| irl530n 2 3 4 5 6 7 |
International Rectifier | HEXFET Power MOSFET |
| irl530 2 3 4 5 6 7 |
International Rectifier | HEXFET Power MOSFET |
| irl530ns 2 3 4 5 6 7 |
International Rectifier | HEXFET?? Power MOSFET |
| irl530a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | Advanced Power MOSFET |
| irl540a 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | Advanced Power MOSFET |
| irl540 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 100V N-Channel Power MOSFET(漏源电压为100V的N沟道增强型功率MOS场效应管) |
| irl620a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 200V N-Channel Power MOSFET(漏源电压为200V的N沟道增强型功率MOS场效应管) |
| irl620s 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 200V N-Channel Power MOSFET(漏源电压为200V的N沟道增强型功率MOS场效应管) |
| irl620 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 200V N-Channel Power MOSFET(漏源电压为200V的N沟道增强型功率MOS场效应管) |
| irl630s 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 200V N-Channel Power MOSFET(漏源电压为200V的N沟道增强型功率MOS场效应管) |
| irl630 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 200V N-Channel Power MOSFET(漏源电压为200V的N沟道增强型功率MOS场效应管) |
| irl640s 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET（400V，1.8Ω，3.3A）(N沟道功率MOS场效应管（漏源电压400V，导通电阻1.8Ω，漏电流3.3A）) |
| irl640 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET（400V，1.8Ω，3.3A）(N沟道功率MOS场效应管（漏源电压400V，导通电阻1.8Ω，漏电流3.3A）) |
| irli520a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | Advanced Power MOSFET |
| irlw520a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | Advanced Power MOSFET |
| irlwi520a 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | Advanced Power MOSFET |
| irli540a 2 3 4 5 6 7 8 9 |
FAIRCHILD SEMICONDUCTOR CORP | ADVANCED POWER MOSFET |
| irlw540a 2 3 4 5 6 7 8 9 |
FAIRCHILD SEMICONDUCTOR CORP | ADVANCED POWER MOSFET |
| irlwi540a 2 3 4 5 6 7 8 9 |
Fairchild Semiconductor Corporation | Advanced Power MOSFET |
| irli630 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | ADVANCED POWER MOSFET |
| irli630a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | ADVANCED POWER MOSFET |
| irlwi630a 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | Advanced Power MOSFET |
| irlw630a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | ADVANCED POWER MOSFET |
| irlm110a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0; |
| irlm120a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | Advanced Power MOSFET |