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参数资料
| 型号： | IRLWI520A |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先进的功率MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 233K |
| 代理商： | IRLWI520A |
IRLW/I520A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
I
D
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
175
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 40 V
3. 250
μ
s Pulse Test
I
D
V
GS
, Gate-Source Voltage [V]
0
10
20
30
40
0.0
0.1
0.2
0.3
0.4
@ Note : T
J
= 25
o
C
V
GS
= 10 V
V
GS
= 5 V
R
D
]
D
I
D
, Drain Current [A]
0
2
4
6
8
10
12
0
2
4
6
V
DS
= 80 V
V
DS
= 50 V
V
DS
= 20 V
@ Notes : I
D
= 9.2 A
V
G
Q
G
, Total Gate Charge [nC]
0.4
0.6
0.8
V
SD
, Source-Drain Voltage [V]
1.0
1.2
1.4
1.6
1.8
2.0
2.2
10
-1
10
0
10
1
175
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
10
0
10
1
0
120
240
360
480
600
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
3
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
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相关代理商/技术参数 |
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|---|---|
| IRLWI530A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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| IRLWI620A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLWI630A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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