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参数资料
| 型号： | IRLWI520A |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先进的功率MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 233K |
| 代理商： | IRLWI520A |
IRLW/I520A
100
--
1.0
--
--
--
--
--
0.1
--
--
--
--
--
90
39
5
10
19
9
10.2
1.7
6.0
--
--
2.0
100
-100
10
100
0.22
--
440
115
50
20
30
50
30
15
--
--
7.7
340
--
--
--
98
0.34
9.2
32
1.5
--
--
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=2mH, I
AS
=9.2A, V
DD
=25V, R
G
=27
, Starting T
J
=25
℃
③
I
≤
9.2A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
, Starting T
=25
℃
④
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
≤
2%
⑤
Essentially Independent of Operating Temperature
2
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
℃
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
Δ
BV/
Δ
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(
＂
Miller
＂
) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
℃
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=150
℃
V
GS
=5V,I
D
=4.6A
④
V
DS
=40V,I
D
=4.6A
④
V
DD
=50V,I
D
=9.2A,
R
G
=9
See Fig 13
④ ⑤
V
DS
=80V,V
GS
=5V,
I
D
=9.2A
See Fig 6 & Fig 12
④ ⑤
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
①
Diode Forward Voltage
④
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
℃
,I
S
=9.2A,V
GS
=0V
T
J
=25
℃
,I
F
=9.2A
di
F
/dt=100A/
μ
s
④
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