- 您现在的位置：买卖IC网 > PDF目录378639 > IRLWI630A (Fairchild Semiconductor Corporation) Advanced Power MOSFET PDF资料下载
参数资料
| 型号： | IRLWI630A |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先进的功率MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 225K |
| 代理商： | IRLWI630A |
IRLW/I630A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
I
D
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
0.00
0.25
0.50
0.75
1.00
@ Note : T
J
= 25
o
C
V
GS
= 10 V
V
GS
= 5 V
R
D
]
D
I
D
, Drain Current [A]
0
4
16
20
0
2
4
6
V
DS
= 160 V
V
DS
= 100 V
V
DS
= 40 V
@ Notes : I
D
= 9 A
V
G
Q
G
, Total Gate Charge [nC]
0
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
= 40 V
3. 250
μ
s Pulse Test
I
D
V
GS
, Gate-Source Voltage [V]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
-1
10
0
10
1
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
180
360
540
720
900
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
相关PDF资料 |
PDF描述 |
|---|---|
| IRLW630A | ADVANCED POWER MOSFET |
| IRLM110A | H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0; |
| IRLM120A | Advanced Power MOSFET |
| IRLM210 | Advanced Power MOSFET |
| IRLM210A | Advanced Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLWI640A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLZ10 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) | TO-220AB |
| IRLZ14 | 功能描述:MOSFET N-Chan 60V 10 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ14_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRLZ14-024 | 制造商:International Rectifier 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,10A I(D),TO-220AB,FORMED LEADS 024 |
发布紧急采购，3分钟左右您将得到回复。