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参数资料
| 型号： | IRLWI630A |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先进的功率MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 225K |
| 代理商： | IRLWI630A |
IRLW/I630A
200
--
1.0
--
--
--
--
--
0.18
--
--
--
--
--
90
44
8
6
30
9
18.6
3.5
8.3
--
--
2.0
100
-100
10
100
0.4
--
755
115
55
25
20
70
30
27
--
--
4.5
580
--
--
--
158
0.78
9
32
1.5
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=1mH, I
AS
=9A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
(3) I
SD
≤
9A, di/dt
≤
220A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
°
C
(4) Pulse Test: Pulse Width = 250
μ
s, Duty Cycle
≤
2%
(5) Essentially Independent of Operating Temperature
2
1&+$11(/
32:(5 026)(7
Electrical Characteristics
(T
C
=25
°
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
°
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=20V
V
GS
=-20V
V
DS
=200V
V
DS
=160V,T
C
=125
°
C
V
GS
=5V,I
D
=4.5A
(4)
V
DS
=40V,I
D
=4.5A
(4)
V
DD
=100V,I
D
=9A,
R
G
=6
See Fig 13
(4) (5)
V
DS
=160V,V
GS
=5V,
I
D
=9A
See Fig 6 & Fig 12
(4) (5)
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
°
C,I
S
=9A,V
GS
=0V
T
J
=25
°
C,I
F
=9A
di
F
/dt=100A/
μ
s
(4)
相关PDF资料 |
PDF描述 |
|---|---|
| IRLW630A | ADVANCED POWER MOSFET |
| IRLM110A | H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0; |
| IRLM120A | Advanced Power MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLWI640A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLZ10 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) | TO-220AB |
| IRLZ14 | 功能描述:MOSFET N-Chan 60V 10 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ14_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRLZ14-024 | 制造商:International Rectifier 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,10A I(D),TO-220AB,FORMED LEADS 024 |
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