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参数资料
| 型号： | IRLM110A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0; |
| 中文描述： | 1.5 A, 100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 227K |
| 代理商： | IRLM110A |
IRLM110A
BV
DSS
= 100 V
R
DS(on)
= 0.44
I
D
= 1.5 A
100
1.5
1.18
12
±
20
60
1.5
0.22
6.5
2.2
0.018
- 55 to +150
300
56.8
--
ν
Avalanche Rugged Technology
ν
Rugged Gate Oxide Technology
ν
Lower Input Capacitance
ν
Improved Gate Charge
ν
Extended Safe Operating Area
ν
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= 100V
ν
Lower R
DS(ON)
: 0.336
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Ambient *
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=70
o
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
(3)
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
SOT-223
1. Gate 2. Drain 3. Source
2
1
3
P
D
T
J
, T
STG
T
L
Rev. A
相关PDF资料 |
PDF描述 |
|---|---|
| IRLM120A | Advanced Power MOSFET |
| IRLM210 | Advanced Power MOSFET |
| IRLM210A | Advanced Power MOSFET |
| IRLR210 | ADVANCED POWER MOSFET |
| IRLR210A | ADVANCED POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLM110ATF | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLM120A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLM120ATF | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLM210 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLM210A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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