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参数资料
| 型号： | IRLM110A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0; |
| 中文描述： | 1.5 A, 100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 227K |
| 代理商： | IRLM110A |
IRLM110A
N-CHANNEL
POWER MOSFET
10
-1
10
0
10
1
10
0
10
1
10
2
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
I
D
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
10
0
10
1
10
2
25
o
C
175
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 40 V
3. 250
μ
s Pulse Test
I
D
V
GS
, Gate-Source Voltage [V]
0
30
60
90
120
0.00
0.02
0.04
0.06
0.08
@ Note : T
J
= 25
o
C
V
GS
= 10 V
V
GS
= 5 V
R
D
]
D
I
D
, Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
10
0
10
1
10
2
175
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
0
8
16
24
32
40
0
2
4
6
V
DS
= 80 V
V
DS
= 50 V
V
DS
= 20 V
@ Notes : I
D
= 28 A
V
G
Q
G
, Total Gate Charge [nC]
10
0
10
1
0
500
1000
1500
2000
2500
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLM110ATF | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLM120A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLM120ATF | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLM210 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLM210A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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