参数资料
型号: IRLI630
厂商: Fairchild Semiconductor Corporation
英文描述: ADVANCED POWER MOSFET
中文描述: 先进的功率MOSFET
文件页数: 5/7页
文件大小: 225K
代理商: IRLI630
IRLW/I630A
5
1&+$11(/
32:(5 026)(7
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
E
AS
=
L
L
I
AS2
-1
2
--------------------
BV
DSS
-- V
DD
BV
V
in
V
out
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
Charge
V
GS
5V
Q
g
Q
gs
Q
gd
Vary t
to obtain
required peak I
D
5V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V
DS
)
5V
V
out
V
in
R
L
DUT
R
G
3mA
V
GS
Current Sampling (I
G
)
Resistor
Current Sampling (I
D
)
Resistor
DUT
V
DS
300nF
50k
200nF
12V
Same Type
as DUT
Current Regulator
R
1
R
2
相关PDF资料
PDF描述
IRLI630A ADVANCED POWER MOSFET
IRLWI630A Advanced Power MOSFET
IRLW630A ADVANCED POWER MOSFET
IRLM110A H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0;
IRLM120A Advanced Power MOSFET
相关代理商/技术参数
参数描述
IRLI630A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLI630ATU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI630G 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI630GPBF 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI640 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)