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参数资料
| 型号： | IRFW740S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 400V N-Channel Power MOSFET(漏源电压为400V的N沟道增强型功率MOS场效应管) |
| 中文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 7/7页 |
| 文件大小： | 239K |
| 代理商： | IRFW740S |
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相关PDF资料 |
PDF描述 |
|---|---|
| IRFWI530A | Advanced Power MOSFET |
| IRFWZ14 | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| IRFWZ24 | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| IRFWZ34 | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
| IRFWZ44 | 60V N-Channel Power MOSFET(漏源电压为60V的N沟道增强型功率MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFW740TM | 制造商:Samsung Semiconductor 功能描述: |
| IRFW820A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-263AB |
| IRFW820B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| IRFW820BTM | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFW830A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-263AB |
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