- 您现在的位置：买卖IC网 > PDF目录378639 > IRLI630A (FAIRCHILD SEMICONDUCTOR CORP) ADVANCED POWER MOSFET PDF资料下载
参数资料
| 型号： | IRLI630A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | ADVANCED POWER MOSFET |
| 中文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | I2PAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 225K |
| 代理商： | IRLI630A |
IRLW/I630A
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
D
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
0
2
4
6
8
10
I
D
T
c
, Case Temperature [
o
C]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
100
μ
s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
V
DS
, Drain-Source Voltage [V]
10
-5
10
-4
t
1
, Square Wave Pulse Duration [sec]
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ
JC
(t)=1.81
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θ
JC
(t)
Z
θ
J
(
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= 5 V
2. I
D
= 4.5 A
R
D
D
T
J
, Junction Temperature [
o
C]
1&+$11(/
32:(5 026)(7
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
t
1
t
2
相关PDF资料 |
PDF描述 |
|---|---|
| IRLWI630A | Advanced Power MOSFET |
| IRLW630A | ADVANCED POWER MOSFET |
| IRLM110A | H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0; |
| IRLM120A | Advanced Power MOSFET |
| IRLM210 | Advanced Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLI630ATU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLI630G | 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLI630GPBF | 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLI640 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A) |
| IRLI640A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-262AA |
发布紧急采购，3分钟左右您将得到回复。