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| 型号： | IRFW634B |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 649K |
| 代理商： | IRFW634B |
Rev. B, November 2001
I
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.9mH, I
= 8.1A, V
DD
= 50V, R
= 25
,
Starting T
= 25°C
3. I
≤
8.1A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
250
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.27
--
V/°C
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
V
GS
= 10 V, I
D
= 4.05 A
--
0.345
0.45
V
DS
= 40 V, I
D
= 4.05 A
--
7.6
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
780
95
20
1000
125
25
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 125 V, I
D
= 8.1 A,
R
G
= 25
--
--
--
--
--
--
--
15
75
100
65
29
4.2
14
40
160
210
140
38
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 200 V, I
D
= 8.1 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
8.1
32.4
1.5
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 8.1 A
V
GS
= 0 V, I
S
= 8.1 A,
dI
F
/ dt = 100 A/
μ
s
170
0.91
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