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参数资料
| 型号： | IRF3205 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 8.0mohm，身份证\u003d已废除） |
| 文件页数： | 1/10页 |
| 文件大小： | 160K |
| 代理商： | IRF3205 |
IRF3205S/L
HEXFET
Power MOSFET
03/09/01
Thermal Resistance
www.irf.com
1
V
DSS
= 55V
R
DS(on)
= 8.0m
I
D
= 110A
S
D
G
Advanced HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D
2
Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
D
2
Pak
IRF3205S
TO-262
IRF3205L
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)
*
PD - 94149
Absolute Maximum Ratings
Parameter
Max.
110
80
390
200
1.3
± 20
62
20
5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3205L | 功能描述:MOSFET N-CH 55V 110A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF3205LPBF | 功能描述:MOSFET MOSFT 55V 110A 8mOhm 97.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3205PBF | 功能描述:MOSFET MOSFT 55V 98A 8mOhm 97.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3205PBF | 制造商:International Rectifier 功能描述:MOSFET N 55V 98A TO-220 制造商:International Rectifier 功能描述:MOSFET N TO-220 TUBE 50 制造商:International Rectifier 功能描述:MOSFET, N, 55V, 98A, TO-220 |
| IRF3205PBF | 制造商:International Rectifier 功能描述:MOSFET |
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