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参数资料
| 型号： | IRF3708LPBF |
| 厂商： | International Rectifier |
| 英文描述： | SMPS MOSFET HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET MOSFET的开关电源功率MOSFET |
| 文件页数： | 1/11页 |
| 文件大小： | 286K |
| 代理商： | IRF3708LPBF |
www.irf.com
1
IRF3708PbF
IRF3708SPbF
IRF3708LPbF
SMPS MOSFET
HEXFET Power MOSFET
R
DS(on)
max
12m
High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
Benefits
Ultra-Low Gate Impedance
Applications
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
V
DSS
30V
I
D
62A
Notes
through are on page 10
Absolute Maximum Ratings
Symbol
V
DS
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@T
C
= 70°C
Maximum Power Dissipation
Linear Derating Factor 0.58 W/°C
T
J
, T
STG
Junction and Storage Temperature Range
Parameter
Max.
30
Units
V
Drain-Source Voltage
±12 V
62
52
248
87
61
A
W
W
-55 to + 175
°C
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D
2
Pak
IRF3708S
TO-220AB
IRF3708
TO-262
IRF3708L
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.73
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
°C/W
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
相关PDF资料 |
PDF描述 |
|---|---|
| IRF3708PBF | SMPS MOSFET HEXFET㈢Power MOSFET |
| IRF3708SPBF | SMPS MOSFET HEXFET㈢Power MOSFET |
| IRF3710LPBF | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 74; Grade: -3; Package: Lead-Free TQFP; Pins: 100; Temp.: AUTO |
| IRF3710SPBF | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; Pins: 144; Temp.: AUTO |
| IRF3711LPBF | HEXFET Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3708PBF | 功能描述:MOSFET MOSFT 30V 62A 12mOhm 24nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3708S | 功能描述:MOSFET N-CH 30V 62A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF3708SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 62A 3-Pin(2+Tab) D2PAK |
| IRF3708SPBF | 功能描述:MOSFET MOSFT 30V 62A 12mOhm 24nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3708SPBF | 制造商:International Rectifier 功能描述:N CHANNEL MOSFET 30V 62A D2-PAK |
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