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参数资料
| 型号： | IRF3710LPBF |
| 厂商： | International Rectifier |
| 英文描述： | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 74; Grade: -3; Package: Lead-Free TQFP; Pins: 100; Temp.: AUTO |
| 中文描述： | ㈢的HEXFET功率MOSFET（减振钢板基本\u003d 100V的，的RDS（on）\u003d 2300ヘ，身份证\u003d 57A条） |
| 文件页数： | 2/11页 |
| 文件大小： | 283K |
| 代理商： | IRF3710LPBF |
2
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S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
T
J
= 25°C, I
F
= 28A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
140
670 1010
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.2
220
V
ns
nC
Source-Drain Ratings and Characteristics
57
230
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.70mH, R
G
= 25
,
I
AS
= 28A, V
GS
=10V. (See Figure 12).
I
SD
≤
28A di/d
≤
380A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Uses IRF3710 data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
Parameter
Min. Typ. Max. Units
100
–––
–––
0.13
–––
–––
2.0
–––
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
58
–––
45
–––
47
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
=28A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 28A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 28A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 28A
R
G
= 2.5
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
AS
= 28A, L = 0.70mH
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
23
4.0
–––
25
250
100
-100
130
26
43
–––
–––
–––
–––
V
V/°C
m
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
––– 1060
3130 –––
410
72
–––
–––
280
pF
mJ
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
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PDF描述 |
|---|---|
| IRF3710SPBF | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; Pins: 144; Temp.: AUTO |
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