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参数资料
| 型号： | IRF3808SPBF |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽车MOSFET的 |
| 文件页数： | 1/11页 |
| 文件大小： | 308K |
| 代理商： | IRF3808SPBF |
IRF3808SPbF
IRF3808LPbF
HEXFET
Power MOSFET
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, low R
θ
JC, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
use in higher power Automotive electronic systems and a wide
variety of other applications.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
106
75
550
200
1.3
± 20
430
82
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
°C
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted, Steady State)**
Thermal Resistance
V
DSS
= 75V
R
DS(on)
= 0.007
I
D
= 106A
Description
www.irf.com
1
●
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
Benefits
Typical Applications
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Lead-Free
●
●
AUTOMOTIVE MOSFET
PD - 95467
HEXFET(R) is a registered trademark of International Rectifier.
D
2
Pak
IRF3808S
TO-262
IRF3808L
●
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3808SPBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:200W |
| IRF3808STRL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-262 |
| IRF3808STRLPBF | 功能描述:MOSFET MOSFT 75V 105A 7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3808STRR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-263AB |
| IRF3808STRRPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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