- 您现在的位置：买卖IC网 > PDF目录377503 > IRF3808SPBF (International Rectifier) AUTOMOTIVE MOSFET PDF资料下载
参数资料
| 型号： | IRF3808SPBF |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽车MOSFET的 |
| 文件页数： | 7/11页 |
| 文件大小： | 308K |
| 代理商： | IRF3808SPBF |
IRF3808S/LPbF
www.irf.com
7
Fig 15.
Typical Avalanche Current Vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
EA
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 140A
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
10000
A
0.05
0.10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
tav
0.01
相关PDF资料 |
PDF描述 |
|---|---|
| IRF510PBF | HEXFET POWER MOSFET |
| IRF510S | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A) |
| IRF520L | Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) |
| IRF520NS | Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) |
| IRF520VL | Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3808SPBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:200W |
| IRF3808STRL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-262 |
| IRF3808STRLPBF | 功能描述:MOSFET MOSFT 75V 105A 7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3808STRR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-263AB |
| IRF3808STRRPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。