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参数资料
| 型号： | IRF3710STRR |
| 厂商： | International Rectifier |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 57A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 57A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 28A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3130pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
PD - 94201C
IRF3710S
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Advanced Process Technology
IRF3710L
HEXFET ? Power MOSFET
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l
l
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l
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
D
S
V DSS = 100V
R DS(on) = 23m ?
I D = 57A
Description
Advanced HEXFET ? Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D 2 Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D 2 Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF3710S
Max.
TO-262
IRF3710L
Units
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
57
40
180
200
1.3
± 20
28
20
5.8
A
W
W/°C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
–––
–––
0.75
40
°C/W
www.irf.com
1
09/15/09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3710STRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK T/R |
| IRF3710STRRPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3710Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRF3710ZGPBF | 功能描述:MOSFET 100V HALOGEN-FREE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3710ZHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB |
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