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| 型号： | IRF3710STRR |
| 厂商： | International Rectifier |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 57A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 57A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 28A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3130pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRF3710S/IRF3710L
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.13
–––
V/°C
Reference to 25°C, I D = 1mA ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
23 m ?
V GS = 10V, I D =28A
?
μA
100 V GS = 20V
––– I D = 28A
––– R G = 2.5 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
58
45
47
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 28A ??
25 V DS = 100V, V GS = 0V
250 V DS = 80V, V GS = 0V, T J = 150°C
nA
-100 V GS = -20V
130 I D = 28A
26 nC V DS = 80V
43 V GS = 10V, See Fig. 6 and 13 ?
––– V DD = 50V
ns
––– V GS = 10V, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
7.5 –––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3130 ––– V GS = 0V
410 ––– V DS = 25V
72 ––– pF ? = 1.0MHz, See Fig. 5 ?
E AS
Single Pulse Avalanche Energy ??
–––
1060 ? 280 ?
mJ I AS = 28A, L = 0.70mH
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
A
integral reverse
p-n junction diode.
I S
I SM
V SD
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
MOSFET symbol
––– ––– 57
showing the
G
––– ––– 230
––– ––– 1.2 V T J = 25°C, I S = 28A, V GS = 0V ?
D
S
t rr
Q rr
t on
Notes:
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– 140 220 ns T J = 25°C, I F = 28A
––– 670 1010 nC di/dt = 100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
? Starting T J = 25°C, L = 0.70mH, R G = 25 ? ,
I AS = 28A, V GS =10V. (See Figure 12).
? I SD ≤ 28A , di/d t ≤ 380A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C.
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
? This is a typical value at device destruction and represents
operation outside rated limits.
? This is a calculated value limited to T J = 175°C .
? Uses IRF3710 data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
www.irf.com
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