参数资料
型号: IRF510STRRPBF
厂商: Vishay Siliconix
文件页数: 9/9页
文件大小: 0K
描述: MOSFET N-CH 100V 5.6A D2PAK
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 5.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 540 毫欧 @ 3.4A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 8.3nC @ 10V
输入电容 (Ciss) @ Vds: 180pF @ 25V
功率 - 最大: 3.7W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263(D2Pak)
包装: 标准包装
其它名称: IRF510STRRPBFDKR
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Revision: 02-Oct-12
1
Document Number: 91000
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