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参数资料
| 型号： | IRF530 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | N-CHANNEL POWER MOSFETS |
| 中文描述： | N沟道功率MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 178K |
| 代理商： | IRF530 |
IRF530NS/L
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.0A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
130
650
1.3
190
970
V
ns
nC
Parameter
Min. Typ. Max. Units
100
–––
–––
0.12
–––
–––
2.0
–––
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.4
–––
27
–––
37
–––
25
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 9.0A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 9.0A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 9.0A
R
G
= 12
R
D
= 5.5
, See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
DV
(BR)DSS
/DT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.11
4.0
–––
25
250
100
-100
44
6.2
21
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
640
160
88
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
Starting T
J
= 25°C, L = 3.1mH
R
G
= 25W, I
AS
= 9.0A. (See Figure 12)
I
SD
≤
9.0A, di/dt
≤
180A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRF530N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Source-Drain Ratings and Characteristics
S
D
G
17
60
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF-530 | 制造商:International Rectifier 功能描述: |
| IRF530/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF530_R4941 | 功能描述:MOSFET USE 512-IRF530A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5305 | 功能描述:MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5305L | 功能描述:MOSFET P-CH 55V 31A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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