| 型号 | 厂商 | 描述 |
| irf520 2 3 4 5 6 7 8 9 10 |
Supertex, Inc. | N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
| irf520n 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) |
| irf520pbf 2 3 4 5 6 7 |
International Rectifier | HEXFET Power MOSFET |
| irf520vpbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET㈢ Power MOSFET |
| irf520v 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) |
| irf5210l 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| irf5210s 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| irf5210 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| irf5305pbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irf5305 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) |
| irf530l 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A) |
| irf530fi 2 3 4 5 6 7 8 9 10 |
意法半导体 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| irf530 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf530 2 3 4 5 6 7 8 9 10 |
Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |
| irf530r 2 3 4 5 6 7 8 9 10 |
Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |
| irf530pbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements |
| irf530 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) |
| irf530ns 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A) |
| irf530 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFETs, 20 A, 60-100 V |
| irf530 2 3 4 5 6 7 8 9 10 |
Transys Electronics Ltd. | N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| irf530nlpbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
| irf530nspbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
| irf530n 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A) |
| irf530n 2 3 4 5 6 7 8 |
INTERSIL CORP | 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET |
| irf530s 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) |
| irf540pbf 2 3 4 5 6 7 |
International Rectifier | HEXFET㈢ Power MOSFET |
| irf540spbf 2 3 4 5 6 7 8 9 |
International Rectifier | HEXFET㈢ Power MOSFET |
| irf5nj3315 2 3 4 5 6 7 |
International Rectifier | POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A) |
| irf5nj5305 2 3 4 5 6 7 |
International Rectifier | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:37; Connector Shell Size:28; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Pin; Gender:Female |
| irf5nj540 2 3 4 5 6 7 |
International Rectifier | POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*) |
| irf5nj6215 2 3 4 5 6 7 |
International Rectifier | POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A) |
| irf5nj9540 2 3 4 5 6 7 |
International Rectifier | POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A) |
| irf5y31n20 2 3 4 5 6 7 |
International Rectifier | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes |
| irf5y3205cm 2 3 4 5 6 7 |
International Rectifier | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes |
| irf5y3710cm 2 3 4 5 6 7 |
International Rectifier | POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) |
| irf5yz48cm 2 3 4 5 6 7 |
International Rectifier | Telecom Protection, 500mA 600V TELECOM SMD |
| irf610spbf 2 3 4 5 6 7 8 9 |
International Rectifier | HEXFET㈢ Power MOSFET |
| irf6216pbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irf6218pbf 2 3 4 5 6 7 |
International Rectifier | HEXFET Power MOSFET |
| irf6218 2 3 4 5 6 7 |
International Rectifier | SMPS MOSFET |
| irf630nstrl 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB |
| irf630n 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) |
| irf630nl 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) |
| irf630ns 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) |
| irf630nstrr 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB |
| irf634n 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| irf634nl 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| irf634ns 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| irf634nstrl 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB |
| irf634nstrr 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB |