| 型号 | 厂商 | 描述 |
| irhf54z30 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| irhf53z30 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| irhf57z30 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| irhf58z30 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| irhf7130 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | HEXFET Transistor(HEXFET MOS场效应管) |
| irhf7230 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | HEXFET Transistor(HEXFET MOS场效应管) |
| irhf8230 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR |
| irhf7330se 2 3 4 5 6 7 8 |
International Rectifier | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效应 Rad Hard HEXFET技术晶体管) |
| irhf7430se 2 3 4 5 6 7 8 |
International Rectifier | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效应 Rad Hard HEXFET技术晶体管) |
| irhf8110 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| irhf3110 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| irhf4110 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| irhf7110 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| irhf9230 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶体管) |
| irhf93130 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶体管) |
| irhg58110 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
| irhg53110 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
| irhg54110 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
| irhg57110 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
| irhg9110 2 3 4 5 6 7 8 |
International Rectifier | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET) |
| irhg93110 2 3 4 5 6 7 8 |
International Rectifier | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET) |
| irhlf630z4 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| irhlf640z4 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| irhlf670z4 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| irhlf680z4 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| irhlf730z4 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| irhlf740z4 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| irhlf770z4 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| irhlf780z4 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| irhm53160 2 3 4 5 6 7 8 |
International Rectifier | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| irhm54160 2 3 4 5 6 7 8 |
International Rectifier | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| irhm57160 2 3 4 5 6 7 8 |
International Rectifier | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| irhm58160 2 3 4 5 6 7 8 |
International Rectifier | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| irhm54z60 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET) |
| irhm53z60 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET) |
| irhm57z60 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET) |
| irhm58z60 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET) |
| irhm57264se 2 3 4 5 6 7 8 |
International Rectifier | Thru-Hole Radiation Hardened Power MOSFET(通孔安装抗辐射功率MOSFET) |
| irhm7054 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶体管) |
| irhm8054 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶体管) |
| irhm7160 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶体管) |
| irhm9130 2 3 4 5 6 7 8 |
International Rectifier | P-Channel RAD HARD HEXFET TRANSISTOR(P 沟道 Rad Hard 技术 HEXFET晶体管) |
| irhm93160 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶体管) |
| irhms57264se 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL |
| irhms593160 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| irhms597160 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| irhn7054 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶体管) |
| irhn8054 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶体管) |
| irhn7130 2 3 4 5 6 7 8 9 10 11 12 13 14 |
International Rectifier | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) |
| irhn8130 2 3 4 5 6 7 8 9 10 11 12 13 14 |
International Rectifier | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) |