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参数资料
| 型号： | IRHM53160 |
| 厂商： | International Rectifier |
| 英文描述： | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| 中文描述： | 100V的N通道通孔抗辐射功率MOSFET（100V的，通孔安装抗辐射功率?沟道MOSFET的） |
| 文件页数： | 1/8页 |
| 文件大小： | 108K |
| 代理商： | IRHM53160 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
35*
35*
140
250
2.0
±20
500
35
25
3.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
4/10/00
www.irf.com
1
100V, N-CHANNEL
TECHNOLOGY
R
5
* Current is limited by internal wire diameter
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
IRHM57160 100K Rads (Si) 0.018
IRHM53160 300K Rads (Si) 0.018
IRHM54160 600K Rads (Si) 0.018
IRHM58160 1000K Rads (Si) 0.019
I
D
35A*
35A*
35A*
35A*
Features:
n
Single Event Effect (SEE) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Ratings
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermatically Sealed
n
Electically Isolated
n
Ceramic Eyelets
n
Light Weight
TO-254AA
Pre-Irradiation
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57160
PD - 93784C
相关PDF资料 |
PDF描述 |
|---|---|
| IRHM54160 | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| IRHM57160 | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| IRHM58160 | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| IRHM54Z60 | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET) |
| IRHM53Z60 | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM53160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM53160SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM53163SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHM53164SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHM53260 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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