参数资料
型号: IRHM53160
厂商: International Rectifier
英文描述: 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET)
中文描述: 100V的N通道通孔抗辐射功率MOSFET(100V的,通孔安装抗辐射功率?沟道MOSFET的)
文件页数: 6/8页
文件大小: 108K
代理商: IRHM53160
IRHM57160
Pre-Irradiation
6
www.irf.com
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
12V
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
25
50
T , Case Temperature (°
75
100
125
150
0
20
40
60
80
100
I
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
相关PDF资料
PDF描述
IRHM54160 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET)
IRHM57160 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET)
IRHM58160 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET)
IRHM54Z60 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET)
IRHM53Z60 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET)
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