参数资料
型号: IRHF93130
厂商: International Rectifier
英文描述: HEXFET Transistor(HEXFET 晶体管)
中文描述: 的HEXFET晶体管(之HEXFET晶体管)
文件页数: 5/8页
文件大小: 122K
代理商: IRHF93130
IRHF9130, IRHF93130, JANSR-, JANSF-, 2N7389 Device
REVEW ONLY
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.2
1.0
1.8
2.6
3.4
4.2
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-6.5
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
Pre-Irradiation
A
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