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参数资料
| 型号： | IRHG53110 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
| 中文描述： | 抗辐射功率MOSFET的通孔（莫- 036） |
| 文件页数： | 4/8页 |
| 文件大小： | 112K |
| 代理商： | IRHG53110 |
IRHG57110
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
0.1
1
10
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
0.1
0.1
1
1
10
10
0.1
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
°
TOP
BOTTOM
5.0V
V , Drain-to-Source Voltage (V)
DS
I
D
D
5.0V
0.1
1
10
5.0
5.5
6.0
6.5
VDS
20μs PULSE WIDTH
V , Gate-to-Source Voltage (V)
I
D
T = 25 C
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R
(
D
V
=
I
=
GS
D
12V
1.6A
VGS
I
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相关代理商/技术参数 |
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|---|---|
| IRHG53110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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