参数资料
型号: IRHM8054
厂商: International Rectifier
英文描述: HEXFET Transistor(HEXFET 晶体管)
中文描述: 的HEXFET晶体管(之HEXFET晶体管)
文件页数: 5/8页
文件大小: 129K
代理商: IRHM8054
www.irf.com
5
IRHM7054, IRHM8054 Devices
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
13
35A
V
= 30V
DS
V
= 48V
DS
1
10
100
1000
0.4
1.0
V ,Source-to-Drain Voltage (V)
1.6
2.2
2.8
3.4
4.0
I
S
V = 0 V
T = 25 C
°
T = 150 C
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
Pre-Irradiation
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