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参数资料
| 型号： | IRHG57110 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
| 中文描述： | 抗辐射功率MOSFET的通孔（莫- 036） |
| 文件页数： | 5/8页 |
| 文件大小： | 112K |
| 代理商： | IRHG57110 |
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5
Pre-Irradiation
IRHG57110
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
200
400
600
800
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
4
8
12
16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
1.6A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
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