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参数资料
| 型号： | IRHF54Z30 |
| 厂商： | International Rectifier |
| 英文描述： | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| 中文描述： | 30V的N通道通孔抗辐射功率MOSFET（30V的，通孔安装抗辐射功率?沟道马鞍山场效应管） |
| 文件页数： | 1/8页 |
| 文件大小： | 128K |
| 代理商： | IRHF54Z30 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
12
*
10
48
25
0.2
±20
520
12
2.5
3.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF57Z30
30V, N-CHANNEL
TECHNOLOGY
R
5
12/01/99
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHF57Z30
100K Rads (Si) 0.045
IRHF53Z30
300K Rads (Si) 0.045
IRHF54Z30
600K Rads (Si) 0.045
IRHF58Z30
1000K Rads (Si) 0.056
I
D
12A*
12A*
12A*
12A*
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Neutron Tolerant
n
Identical Pre and Post Electrical Test Conditions
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Ratings
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
For footnotes refer to the last page
TO-39
* Current is limited by internal wire diameter
PD - 93793
相关PDF资料 |
PDF描述 |
|---|---|
| IRHF53Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| IRHF57Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| IRHF58Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| IRHF7130 | HEXFET Transistor(HEXFET MOS场效应管) |
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相关代理商/技术参数 |
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|---|---|
| IRHF57034 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 12A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 12A 18LLCC - Rail/Tube |
| IRHF57034SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF57130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF57133SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF57214SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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