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参数资料
| 型号： | IRHN8054 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶体管) |
| 中文描述： | 的HEXFET晶体管（之HEXFET晶体管） |
| 文件页数： | 1/8页 |
| 文件大小： | 97K |
| 代理商： | IRHN8054 |
Product Summary
Part Number
IRHN7054
IRHN8054
BV
DSS
60V
60V
R
DS(on)
0.027
0.027
I
D
35A
35A
Features:
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Light Weight
n
Surface Mount
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current 30
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight
IRHN7054, IRHN8054
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
35
283
150
1.2
±20
500
35
15
3.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
2.6 (typical)
g
N-CHANNEL
MEGA RAD HARD
PD - 90884A
Pre-Irradiation
60Volt, 0.027
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the RAD
HARDprocess utilizes International Rectifier’s pat-
ented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
o
C
A
1/6/99
www.irf.com
1
[REF:MIL-PRF-19500/603]
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
JANSH2N7394U
IRHN7054
IRHN8054
JANSR2N7394U
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PDF描述 |
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| IRHN8130 | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) |
| IRHN7230 | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
| IRHN8230 | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
| IRHN7250 | HEXFET Transistor(HEXFET 晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHN8130 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN8150 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN8230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN8250 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN8450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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