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参数资料
| 型号： | IRHN8054 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶体管) |
| 中文描述： | 的HEXFET晶体管（之HEXFET晶体管） |
| 文件页数： | 8/8页 |
| 文件大小： | 97K |
| 代理商： | IRHN8054 |
IRHN7054, IRHN8054, JANSR-,JANSH-,2N7394U Devices
Pre-Irradiation
8
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 25V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL
Peak IL = 35A, VGS = 12V, 25
≤
RG
≤
200
ISD
≤
35A, di/dt
≤
220A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
2
) ]
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-irradiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
WORLD HEADQUARTERS:
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IR GREAT BRITAIN:
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IR CANADA:
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IR ITALY:
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IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 1/99
Case Outline and Dimensions — SMD-1
SMD-1
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