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参数资料
| 型号： | IRHN7230 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0） |
| 文件页数： | 1/14页 |
| 文件大小： | 513K |
| 代理商： | IRHN7230 |
Product Summary
Part Number
IRHN7230
IRHN8230
BV
DSS
200V
200V
R
DS(on)
0.40
0.40
I
D
9.0A
9.0A
Features:
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Surface Mount
I
Light-weight
I
I
N-CHANNEL
MEGA RAD HARD
Provisional Data Sheet No. PD-9.822A
200 Volt, 0.40
, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 10
6
Rads (Si). Under
identical
pre-
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain
identical
electrical specifi-
cations up to 1 x 10
5
Rads (Si) total dose. At 1 x 10
6
Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Absolute Maximum Ratings
IRHN7230
IRHN8230
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHN7230, IRHN8230
9.0
6.0
36
75
0.60
±20
330 (see fig. 29)
9.0
7.5
5.0 (see fig. 30)
-55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5 seconds)
2.6 (typical)
g
Pre-Radiation
o
C
A
Next Data Sheet
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| IRHN8230 | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
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相关代理商/技术参数 |
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