参数资料
型号: IRHN7230
厂商: International Rectifier
英文描述: TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
中文描述: 晶体管N沟道(BVdss \u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0)
文件页数: 14/14页
文件大小: 513K
代理商: IRHN7230
IRHN7230, IRHN8230 Devices
Radiation Characteristics
Case Outline and Dimensions – SMD-1
Repetitive Rating; Pulse width limited by
maximum junction temperature. (figure 26)
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = 9.0A, VGS = 12V, 25
RG
200
ISD
9.0A, di/dt
120 A/
μ
s,
VDD
BVDSS, TJ
150°C
Suggested RG = 7.5
Pulse width
300
μ
s; Duty Cycle
2%
K/W = °C/W
W/K = W/°C
2
) * [BVDSS/(BVDSS-VDD)]
Total Dose Irradiation with VGS Bias.
+12 volt VGS applied and VDS = 0 during irradiation
per MIL-STD-750, method 1019. (figure 8a)
Total Dose Irradiation with VDS Bias.
VDS = 0.8 x rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019. (figure 8b)
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse. (figure 9)
Study sponsored by NASA. Evaluation performed
at Brookhaven National Labs.
All Pre-Radiation and Post-Radiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/96
Notes:
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. Controlling Dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4 Dimension includes metallization flash
5 Dimension does not include metallization flash
To Order
Next Data Sheet
Index
Previous Datasheet
相关PDF资料
PDF描述
IRHN8230 TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
IRHN7250 HEXFET Transistor(HEXFET 晶体管)
IRHN8250 HEXFET Transistor(HEXFET 晶体管)
IRHN9130 P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P沟道,-100 V, 0.3Ω,抗辐射HEXFET晶体管)
IRHN93130 P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P沟道,-100 V, 0.3Ω,抗辐射HEXFET晶体管)
相关代理商/技术参数
参数描述
IRHN7250 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHN7250SE 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHN7250SESCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHN7450 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHN7450SCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk