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参数资料
| 型号： | IRHF8230 |
| 厂商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR |
| 中文描述： | 重复性雪崩和dv /受好评的HEXFET胸苷？？晶体管 |
| 文件页数： | 5/12页 |
| 文件大小： | 302K |
| 代理商： | IRHF8230 |
IRHF7230, IRHF8230,JANSR-,JANSH-,2N7262 Devices
www.irf.com
5
Post-Irradiation
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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