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参数资料
| 型号： | IRHMS593160 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（低阻值到254AA） |
| 文件页数： | 5/8页 |
| 文件大小： | 174K |
| 代理商： | IRHMS593160 |
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5
Pre-Irradiation
IRHMS597160
Maximum Safe Operating Area
Typical Gate Charge Vs.
Gate-to-Source Voltage
Typical Capacitance Vs.
Drain-to-Source Voltage
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
80
120
160
200
240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-45A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
1000
0.0
1.5
3.0
4.5
6.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
1
10
100
1000
-D
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
1ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHMS593160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHMS593260 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHMS593260SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHMS593Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHMS593Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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